Electronic device and electronic apparatus

Details Electronic device and electronic apparatus Electronic device and electronic apparatus

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S103000, C257S918000, C438S022000, C438S024000, C438S046000, C438S257000

Reexamination Certificate

active

06849861

ABSTRACT:
Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

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