Electronic device achieving a reduction in alpha particle emissi

Details Electronic device achieving a reduction in alpha particle emissi Electronic device achieving a reduction in alpha particle emissi

1994-11-21

1996-06-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257644, 257650, 257651, 257794, 257921, H01L 27108

Patent

active

055235972

ABSTRACT:
Reduced soft errors in charge-sensitive circuit elements such as volatile memory cells 200 occur by using boron-11 to the exclusion of boron-10 or essentially free of boron-10 in borosilicate glass 230, 240 deposited on the substrate 206 directly over the arrays of memory cells. Boron-10 exhibits a high likelihood of fission to release a 1.47 MeV alpha particle upon capture of a naturally occurring cosmic ray neutron. This capture occurs frequently in boron-10 because of its high neutron capture cross-section. Boron-11 does not fission.

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Webb, C., et al., "A 65ns CMOS 1Mb DRAM", ISSCC 1986, pp. 262-263. Feb., 1986.
Shah, A. H., et al., "A 4Mb DRAM with Cross-point Trench Transistor Cell", ISSCC 1986, pp. 268-269. Feb., 1986.
Takada, M., et al., "A 4Mb DRAM with Half Internal-Voltage Bitline Precharge", ISSCC 1986, pp. 270-271. Feb., 1986.

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