Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2003-12-03
2008-03-18
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S723000, C257S774000, C257SE23174, C257SE23177
Reexamination Certificate
active
07345365
ABSTRACT:
An integrated chip package structure and method of manufacturing the same is by adhering dies on an organic substrate and forming a thin-film circuit layer on top of the dies and the organic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.
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Huang Ching-Cheng
Lee Jin-Yuan
Lin Mou-Shiung
Hsu Winston
MEGICA Corporation
Thai Luan
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