Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-05
2005-07-05
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06914304
ABSTRACT:
The electronic component, comprises an integrated circuit incorporating several separate functional blocks within a semiconductor substrate, and electrostatic discharge protection means. These electrostatic discharge protection means comprise several separate metal discharge rails (GNDi) placed above the substrate (SB) and respectively associated with the plurality of functional blocks (CRi), all these metal discharge rails being mutually unconnected electrically within the integrated circuit (CI) but connected electrically via an electrical connection (FLi) external to the integrated circuit to one and the same ground plane (SLG) forming a ground reference for the electrostatic discharges, this ground plane (SLG) being located outside the integrated circuit (CI), and possibly being a heat slug.
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patent: 6362497 (2002-03-01), Hiraga
Busson Pierre
Jouffre Pierre-Olivier
Louis-Gavet Bernard
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Gutman Jose
Jorgenson Lisa K.
Nguyen Cuong
STMicroelectronics SA
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