Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-02-01
2005-02-01
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S710000
Reexamination Certificate
active
06849939
ABSTRACT:
An electronic component package includes a case having a cavity portion including an electronic component therein, and a lid member which is fusion-welded to the case via a fusion-welding layer to hermetically seal the cavity portion. The case has a first metal layer laminated on the case so as to be exposed on the open side at the cavity portion. The lid member has a core portion, and a second metal layer laminated on a side of the core portion facing the case. The fusion-welding layer has a soldering material layer formed of a soldering material, and first and second intermetallic compound layers disposed on opposite sides of the soldering material layer as a result of diffusion of a major component of the soldering material into the first metal layer and the second metal layer. The ratio of the area of the first and second intermetallic compound layers in a longitudinal section of the fusion-welding layer relative to the area of the longitudinal section of the fusion-welding layer is in a range of from about 25% to about 98%. This package maintains superior airtightness even when exposed to a high-temperature atmosphere, which is higher than the melting point of the soldering material.
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Iizuka Minoru
Ishio Masaaki
Ogasawara Yoshikiyo
Shiomi Kazuhiro
Cao Phat X.
Daishinku Corporation
Keating & Bennett LLP
Neomax Co. Ltd.
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