Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-03-21
2010-02-16
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S692000, C257S707000, C257S712000, C257SE23104
Reexamination Certificate
active
07663212
ABSTRACT:
An electronic component includes at least one vertical MOSFET device, a leadframe and a contact clip. A source electrode and gate electrode are provided on a lower surface of the MOSFET device and are mounted on a source portion and a gate portion, respectively, of the leadframe. The contact clip is electrically connected between the drain electrode, which is positioned on the upper surface of MOSFET device, and a drain portion of the leadframe.
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Sawle, Andrew et al.; Novel Power MOSFET Packaging Technology Doubles Power Density in Synchronous Buck Converters for Next Generation Microprocessors; International Rectifier; IEEE; 6 Pgs., 2002.
Arora Ajay K
Banner & Witcoff , Ltd.
Infineon - Technologies AG
Le Thao X
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