Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S213000, C438S142000, C438S197000, C438S199000, C438S216000
Reexamination Certificate
active
07129551
ABSTRACT:
An electronic component is disclosed having a first layer of metallically conductive material, a second layer of semiconductor material, and a third layer between the first and second layers. The third layer comprises a dielectric and at least inhibits charge carrier transport both from the first to the second layer and also from the second to the first layer. The dielectric comprises praseodymium oxide of the form Pr2O3in predominantly single crystal phase, and the second layer comprises silicon with a (001)- or with a (111)-crystal orientation at an interface with the third-layer.
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Flynn Nathan J.
Hahn Loeser & Parks LLP
IHP GmbH-Innovations for High Performance Electronics
Quinto Kevin
LandOfFree
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