Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-23
2011-08-23
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S763000, C257SE21009, C257SE21021, C257SE21585, C257SE23141, C257SE27104, C257SE29343
Reexamination Certificate
active
08004082
ABSTRACT:
It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 60 at. % and the noble metal at a ratio of equal to or greater than 5 at. % and equal to or less than 40 at. %. The noble metal is preferably one or more kinds of metals selected from the group consisting of platinum, gold, silver and palladium.
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Imori Toru
Sekiguchi Junnosuke
Flynn ,Thiel, Boutell & Tanis, P.C.
Lebentritt Michael S
Nippon Mining & Metals Co., Ltd.
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