Electronic component and semiconductor device, method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With stress relief

Reexamination Certificate

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C257S178000, C257S737000, C257SE23021, C257SE23069

Reexamination Certificate

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07470979

ABSTRACT:
A semiconductor device with its package size close to its chip size has a stress absorbing layer, allows a patterned flexible substrate to be omitted, and allows a plurality of components to be fabricated simultaneously. There is: a step of forming electrodes (12) on a wafer (10); a step of providing a resin layer (14) as a stress relieving layer on the wafer (10), avoiding the electrodes (12); a step of forming a chromium layer (16) as wiring from electrodes (12) over the resin layer (14); a step of forming solder balls as external electrodes on the chromium layer (16) over the resin layer (14); and a step of cutting the wafer (10) into individual semiconductor chips; in the steps of forming the chromium layer (16) and solder balls, metal, thin film fabrication technology is used during the wafer process.

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