Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Patent
1997-11-05
1998-10-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
257781, 257737, 257765, H01L 2348, H01L 2352, H01L 2940
Patent
active
058216278
ABSTRACT:
An electronic circuit device includes a substrate, a wiring layer formed on the surface of the substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, a bump formed on the wiring layer and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum, and a micro electronic element formed on the bump, wherein solid-phase diffusion bonding is performed at least either between the wiring layer and the bump or between the bump and an electrode of the micro electronic element.
REFERENCES:
patent: 4912545 (1990-03-01), Go
patent: 4922322 (1990-05-01), Mathew
patent: 5196726 (1993-03-01), Nishiguchi et al.
Van Nostrand Reinhold Company, pp. 280-281, 1964, Robert E. Reed-Hill, "Physical Metallurgy Principles".
Solid State Technology, vol. 34, No. 12, pp. 37-38, Dec. 1991, Thomas H. Ramsey, et al., "The Effect of Ultrasonic Frequency on Intermetallic Reactivity of AU-AL Bonds".
Kizaki Yukio
Mori Miki
Murakami Taijun
Saito Masayuki
Togasaki Takasi
Clark S. V.
Jackson Jerome
Kabushiki Kaisha Toshiba
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