Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-08-25
2000-12-26
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257350, 257383, 257384, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
061664146
ABSTRACT:
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
REFERENCES:
patent: 4517583 (1985-05-01), Uchida
patent: 4783248 (1988-11-01), Kohlhase et al.
patent: 5157470 (1992-10-01), Matsuzaki et al.
patent: 5182624 (1993-01-01), Tran et al.
patent: 5198379 (1993-03-01), Adan
patent: 5202575 (1993-04-01), Sakai
patent: 5246872 (1993-09-01), Mortensen
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5316960 (1994-05-01), Watanbe et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5365104 (1994-11-01), Godinho et al.
patent: 5365112 (1994-11-01), Ohshima
patent: 5371042 (1994-12-01), Ong
patent: 5380678 (1995-01-01), Yu et al.
patent: 5397744 (1995-03-01), Sumi et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5434044 (1995-07-01), Nulman et al.
patent: 5459353 (1995-10-01), Kanazawa
patent: 5472912 (1995-12-01), Miller
patent: 5567966 (1996-10-01), Hwang
patent: 5623157 (1997-04-01), Miyazaki et al.
patent: 5698883 (1997-12-01), Mizuno
patent: 5804878 (1998-09-01), Miyazaki et al.
patent: 5808347 (1998-09-01), Kurimoto et al.
R.C. Ellwanger et al., "The deposition and film properties of reactively sputtered titanium nitride," 1988, pp 289-304.
H. Joswig et al., "Advanced metallization of very-large-scale integration devices," 1989, pp. 17-22.
Cui Baochun
Miyazaki Minoru
Murakami Akane
Yamamoto Mutsuo
Ngo Ngan V.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Electronic circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-997869