Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-16
2006-05-16
Nelms, David (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S250000, C438S393000, C257S257000, C257S103000, C257S069000
Reexamination Certificate
active
07045399
ABSTRACT:
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
REFERENCES:
patent: 4193080 (1980-03-01), Koike et al.
patent: 4517583 (1985-05-01), Uchida
patent: 4783248 (1988-11-01), Kohlhase et al.
patent: 4842705 (1989-06-01), Mueller
patent: 4887146 (1989-12-01), Hinode
patent: 4888210 (1989-12-01), Isozaki et al.
patent: 4907040 (1990-03-01), Kobayashi et al.
patent: 4928156 (1990-05-01), Alvis et al.
patent: 5055899 (1991-10-01), Wakai et al.
patent: 5153142 (1992-10-01), Hsieh
patent: 5157470 (1992-10-01), Matsuzaki et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5182624 (1993-01-01), Tran et al.
patent: 5187604 (1993-02-01), Taniguchi et al.
patent: 5198379 (1993-03-01), Adan
patent: 5202575 (1993-04-01), Sakai
patent: 5246872 (1993-09-01), Mortensen
patent: 5264077 (1993-11-01), Fukui et al.
patent: 5273910 (1993-12-01), Tran et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5316960 (1994-05-01), Watanabe et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5365104 (1994-11-01), Godinho et al.
patent: 5365112 (1994-11-01), Ohshima
patent: 5371042 (1994-12-01), Ong
patent: 5380678 (1995-01-01), Yu et al.
patent: 5397744 (1995-03-01), Sumi et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5414278 (1995-05-01), Kobayashi et al.
patent: 5434044 (1995-07-01), Nulman et al.
patent: 5459353 (1995-10-01), Kanazawa
patent: 5468987 (1995-11-01), Yamazaki et al.
patent: 5472912 (1995-12-01), Miller
patent: 5493129 (1996-02-01), Matsuzaki et al.
patent: 5495353 (1996-02-01), Yamazaki et al.
patent: 5498573 (1996-03-01), Whetten
patent: 5500538 (1996-03-01), Yamazaki et al.
patent: 5521107 (1996-05-01), Yamazaki et al.
patent: 5567966 (1996-10-01), Hwang
patent: 5585949 (1996-12-01), Yamazaki et al.
patent: 5612799 (1997-03-01), Yamazaki et al.
patent: 5623157 (1997-04-01), Miyazaki et al.
patent: 5644370 (1997-07-01), Miyawaki et al.
patent: 5677240 (1997-10-01), Murakami et al.
patent: 5698883 (1997-12-01), Mizuno
patent: 5727391 (1998-03-01), Hayward et al.
patent: 5767547 (1998-06-01), Merchant et al.
patent: 5804878 (1998-09-01), Miyazaki et al.
patent: 5808315 (1998-09-01), Murakami et al.
patent: 5808347 (1998-09-01), Kurimoto et al.
patent: 5938839 (1999-08-01), Zhang
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6168980 (2001-01-01), Yamazaki et al.
patent: 6259120 (2001-07-01), Zhang et al.
patent: 6448612 (2002-09-01), Miyazaki et al.
patent: 2004/0051102 (2004-03-01), Miyazaki et al.
patent: 2005/0003568 (2005-01-01), Yamazaki et al.
patent: 2005/0110091 (2005-05-01), Yamazaki et al.
patent: 2005/0145847 (2005-07-01), Miyazaki et al.
patent: 0 459 836 (1991-12-01), None
patent: 0 459 836 (1991-12-01), None
patent: 0 480 409 (1992-04-01), None
patent: 54-137286 (1979-10-01), None
patent: 60-016462 (1985-01-01), None
patent: 61-183971 (1986-08-01), None
patent: 62-109364 (1987-05-01), None
patent: 62-259469 (1987-11-01), None
patent: 62-286271 (1987-12-01), None
patent: 63-074033 (1988-04-01), None
patent: 63-076212 (1988-04-01), None
patent: 63-185066 (1988-07-01), None
patent: 63-312964 (1988-12-01), None
patent: 01-113731 (1989-05-01), None
patent: 01-122168 (1989-05-01), None
patent: 01-129234 (1989-05-01), None
patent: 01-187983 (1989-07-01), None
patent: 01-259320 (1989-10-01), None
patent: 02-012873 (1990-01-01), None
patent: 02-132833 (1990-05-01), None
patent: 02-254729 (1990-10-01), None
patent: 02-260640 (1990-10-01), None
patent: 02-271632 (1990-11-01), None
patent: 03-108767 (1991-05-01), None
patent: 3-135018 (1991-06-01), None
patent: 03-212976 (1991-09-01), None
patent: 04-048780 (1992-02-01), None
patent: 04-092430 (1992-03-01), None
patent: 04-099326 (1992-03-01), None
patent: 04-100232 (1992-04-01), None
patent: 04-112529 (1992-04-01), None
patent: 04-116821 (1992-04-01), None
patent: 04-223341 (1992-08-01), None
patent: 04-267359 (1992-09-01), None
patent: 04-295826 (1992-10-01), None
patent: 04-301623 (1992-10-01), None
patent: 05-021796 (1993-01-01), None
patent: 05-102055 (1993-04-01), None
patent: 05-210117 (1993-08-01), None
patent: 05-235360 (1993-09-01), None
patent: 05-267667 (1993-10-01), None
patent: 06-104196 (1994-04-01), None
R.C. Ellwanger et al., “The deposition and film properties of reactively sputtered titanium nitride,” 1988, pp. 289-304.
H. Joswig et al., “Advanced metallization of very-large-scale intergration devices,” 1989, pp. 17-22.
Specification and Drawings for application Ser. No. 09/190,618, “Semiconductor Device and Method for Fabricating the Same.”
H. Maeda et al., “A15-in.-Diagonal Full-Color High-Resolution TFT-LCD”, SID 92 Digest, May 17-22, 1992; pp. 47-50.
M. Yamamoto et al., “15 inch a SiTFT-LCD,” Chapter 2 Latest AM-LCD Technology, vol. 1 Outline; Oct. 1, 1992, pp. 52-55.
Office Action of Counterpart Japanese Patent Application No. 5-23289 with English Translation (Mailed Jun. 22, 2004).
U.S. Appl. No. 10/900,462, Filed: Jul. 28, 2004 “Semiconductor Device and Method for Forming the Same”, Yamazaki et al. (Specification, Claims and Drawings).
U.S. Appl. No. 11/022,822, Filed: Dec. 28, 2004, “Electric Circuit”; Miyazaki et al. (Specification, Claims, Drawings and Filing Receipt).
U.S. Appl. No. 11/017,640, Filed: Dec. 22, 2004, “Semiconductor Device and Method for Forming The Same”; Yamazaki et al., (Specification, Claims and Drawings).
U.S. Appl. No. 10/900,462, Filed: Jul. 28, 2004 “Semiconductor Device and Method for Forming the Same”. Yamazaki et a. (Specification, Claims and Drawings).
U.S. Appl. No. 11/022,882, Filed: Dec. 28, 2004, “Electronic Circuit”, Miyazaki et al. (Specification, Claims, Drawings and Filing receipt.
U.S. Appl. No. 10/017, 640, filed: Dec. 22, 2004, “Semiconductor Device And Methods For Forming The Same”; Yamazaki et al. (Specification, Claims and Drawings).
Decision on Rejection for Application No. 00104111.8 from Patent Office of the People's Republic of China, dated Sep. 10, 2004.
Cui Baochun
Miyazaki Minoru
Murakami Akane
Yamamoto Mutsuo
Costellia Jeffrey L.
Lee Calvin
Nelms David
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Electronic circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3576230