Electronic-carrier-controlled photochemical etching process in s

Details Electronic-carrier-controlled photochemical etching process in s Electronic-carrier-controlled photochemical etching process in s

1988-06-16

1989-11-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156654, 156655, 156657, 156662, 437234, H01L 21306, B44C 122

Patent

active

048804932

ABSTRACT:
An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

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A. Yamamoto et al., "Anodic Dissolution of N-Type Gallium Arsenide Under Illumination", J. Electrochemical Society: Solid-State Science and Technology, vol. 122, No. 2, Feb. 75, pp. 260-267.
C. Ashby, "Photochemical Dry Etching of GaAs", Applied Physics Letters, vol. 45, No. 8, Oct. 15, 1984, pp. 892-894.

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