Electronic assembly with high capacity thermal interface and...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support

Reexamination Certificate

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C257SE31131

Reexamination Certificate

active

07098079

ABSTRACT:
To accommodate high power densities associated with high performance integrated circuits, an integrated circuit package includes a heat-dissipating structure in which heat is dissipated from a surface of one or more dice to an integrated heat spreader (IHS) through a high capacity thermal interface formed of diamond, a diamond composite, or graphite. In an embodiment, a diamond layer is grown on the IHS. In another embodiment, a diamond layer is separately formed and affixed to the IHS. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

REFERENCES:
patent: 5291064 (1994-03-01), Kurokawa
patent: 5508230 (1996-04-01), Anderson et al.
patent: 5895972 (1999-04-01), Paniccia
patent: 5907189 (1999-05-01), Mertol
patent: 5985412 (1999-11-01), Gosele
patent: 6091603 (2000-07-01), Daves et al.
patent: 6114256 (2000-09-01), Bachli et al.
patent: 6118177 (2000-09-01), Lischner et al.
patent: 6245249 (2001-06-01), Yamada et al.
patent: 6292369 (2001-09-01), Daves et al.
patent: 6316826 (2001-11-01), Yamamoto et al.
patent: 6317326 (2001-11-01), Vogel et al.
patent: 6390181 (2002-05-01), Hall et al.
patent: 6706562 (2004-03-01), Mahajan et al.
patent: 0350593 (1990-01-01), None
patent: 0915504 (1999-05-01), None
patent: 0915504 (1999-05-01), None
patent: WO-01/31082 (2001-05-01), None
“High Thermal Performance Electronic Package Utilizing a Combination of Heat Spreader Members”,IBM Technical Disclosure Bulletin, vol. 35, No. 3,(Aug. 1992),397-398.
Suga, T., et al., “A new wafer-bonder of ultra-high precision using surface activated bonding (SAB) Concept”,Proceedings of the 2001 IEEE electronic Components and Technology Conference, (May 1-Jun. 1, 2001),6 pgs.
Takagi, H., “Surface activated bonding of silicon wafers at room temperature”,Applied Physics Letter, vol. 68, (Apr. 1996),2222-2224.

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