1975-03-05
1976-01-06
Edlow, Martin H.
357 22, 357 41, 357 45, H01L 2714
Patent
active
039316335
ABSTRACT:
A semiconductor photocathode is described in which the electron emission is obtained from a P-type semiconductor into which free electrons are injected from the source or drain of an FET whose channel is normally blocked. Incident photons absorbed in the channel region unblock the FET causing electron emission. Preferably, the device comprises an imaging array of FET's and associated electron emitters.
REFERENCES:
patent: 3699404 (1972-10-01), Simon
patent: 3721839 (1973-03-01), Shannon
Ralph John Ernest
Shannon John Martin
Edlow Martin H.
Oisher Jack
Trifari Frank R.
U.S. Philips Corporation
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