Semiconductor device

Details Semiconductor device Semiconductor device

1988-07-26

1990-05-08

James, Andrew J.

357 53, H01L 2702

Patent

active

049242865

ABSTRACT:
A Darlington power transistor comprising two transistors (Q.sub.1, Q.sub.2) has a clip diode (D.sub.i) for clipping high surge voltage. A field plate (9a) is formed in a surface of a channel cut region (8) existing in peripheral portion of the semiconductor chip, and is further extended by prescribed size (L.sub.B) toward a transistor forming region.

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