Electron spin mechanisms for inducing magnetic-polarization...

Details Electron spin mechanisms for inducing magnetic-polarization... Electron spin mechanisms for inducing magnetic-polarization...

2005-03-22

2005-03-22

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S158000, C365S097000, C365S066000, C365S048000

Reexamination Certificate

active

06870762

ABSTRACT:
An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-parallel to the LMC layer are injected via the energy-gap, to change the M-ESP of the LMC layer. A non-magnetic material is in electrical communication with the LMC layer and provides a spin-balanced source of current to the LMC layer, responsive to the injection of spin-polarized electrons into the LMC layer.

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