Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-05-20
2000-08-08
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250251, H01J 37317
Patent
active
061005363
ABSTRACT:
An Electron flood apparatus for neutralizing positive charge build-up on substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube for axially receiving and passing an ion beam to a substrate, an opening in a sidewall of the tube, a plasma chamber having an exit aperture in communication with said opening of said tube, a supply of inert gas to said plasma chamber, a high frequency power generator, and means to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam.
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Ito Hiroyuki
Mitchell Robert J.
Moffatt Stephen
Qian Xue-Yu
Applied Materials Inc.
Nguyen Kiet T.
Tennant Boult Wade
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