Electron-emitting woven fabric and display device using same

Fabric (woven – knitted – or nonwoven textile or cloth – etc.) – Scrim – Woven scrim

Reexamination Certificate

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Details

C442S002000, C442S004000, C442S020000, C442S181000, C977S932000, C977S939000, C977S952000, C977S734000

Reexamination Certificate

active

07741232

ABSTRACT:
An electron-emitting woven fabric according to the present invention is intended to provide an electron emission source that can be produced extremely easily, readily shaped to have a large area, and used for a wide variety of applications including a display device. The electron-emitting woven fabric according to the present invention is characterized in that first linear bodies3composed of a conductive layer1and an insulating layer2covering the conductive layer1and second linear bodies4of a conductive material are crossed. Another mode of the electron-emitting woven fabric according to the present invention is characterized in that a carbonaceous material is provided on a surface of each of crossed parts of the second linear bodies crossing the first linear bodies at lifted portions and/or sunk portions of the first linear bodies.

REFERENCES:
patent: 5838118 (1998-11-01), Kochanski et al.
patent: 2003/0133865 (2003-07-01), Smalley et al.
patent: 2006/0047052 (2006-03-01), Barrera et al.
patent: 4-009688 (1992-01-01), None
patent: 5-087934 (1993-04-01), None
patent: 11-302936 (1999-11-01), None
patent: 2000-100358 (2000-04-01), None
patent: 2000-106101 (2000-04-01), None
patent: 2000-151182 (2000-05-01), None
patent: 2000-173446 (2000-06-01), None
patent: 2002-350597 (2002-12-01), None
patent: 2003-107160 (2003-04-01), None
patent: WO 0192381 (2001-12-01), None
Tomohiko et al., “Growth of AE(=Ca,Ba)F2and RE(=Pr,Ce)F3crystals by Micro-Pulling-down Method”, vol. 48, pp. 35-36.

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