Electron emitting semiconductor device

Details Electron emitting semiconductor device Electron emitting semiconductor device

1995-06-07

1998-09-29

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 54, 257 73, 257155, 257192, 257217, 257267, 257269, 257280, 257281, 257928, H01L 2906, H01L 2904, H01L 2947

Patent

active

058148329

ABSTRACT:
An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural P.sup.+ -type area units are positioned under and facing the Schottky barrier electrode. An N.sup.+ -type area is disposed in the vicinity of the P.sup.+ -type units. The impurity concentration is such as to cause an avalanche breakdown in at least a portion of the surfaces.

REFERENCES:
patent: 4259678 (1981-03-01), Van Gorkom et al.
patent: 4303930 (1981-12-01), Van Gorkom et al.
patent: 4641174 (1987-02-01), Baliga
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 4783688 (1988-11-01), Shannon
patent: 4894611 (1990-01-01), Shimoda et al.
patent: 4906833 (1990-03-01), Miyawaki et al.
patent: 4974736 (1990-12-01), Okunuki et al.
patent: 5138402 (1992-08-01), Tsukamoto et al.

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