Electron emitting element

Details Electron emitting element Electron emitting element

1995-04-03

1998-11-17

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313346R, 313446, H01L 2912

Patent

active

058380191

ABSTRACT:
An electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode. A P type semiconductor contacts the N type semiconductor to define a PN junction. A low work function metal electrode contacts the P type semiconductor thus defining a Schottky barrier. First and second means are provided to forward bias the PN junction and to reversed bias the Schottky barrier, respectively.

REFERENCES:
patent: 3334248 (1967-08-01), Stratton
patent: 3581151 (1971-05-01), Bogle et al.
patent: 3958143 (1976-05-01), Bell
patent: 4682074 (1987-07-01), Hoeberechts et al.
Stolte, C.A., et al., "pn-Schottky Hybrid Cold-Cathode," Applied Physics Letters, vol. 19, No. 11, Dec. 1971, pp. 497-498.
Stupp, E., et al., "GaP Negative-Electron-Affinity Cold Cathodes: a Demonstration and Appraisal," Journal of Applied Physics, vol. 48, Nov. 1977, pp. 4741-4748.

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