Electron blocking layers for electronic devices

Details Electron blocking layers for electronic devices Electron blocking layers for electronic devices

2008-10-08

2010-12-07

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257SE29309, C257SE21423, C365S185260

Reexamination Certificate

active

07847341

ABSTRACT:
Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

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Bodefield, M.C

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