Electron beam writing method, fine pattern writing system,...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S3960ML, C250S398000, C250S492200

Reexamination Certificate

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08030625

ABSTRACT:
When writing element shapes of a fine pattern on a substrate applied with a resist by scanning an electron beam thereon, ON/OFF control is performed for emitting the electron beam at a predetermined rotational position of the substrate by a blanking-OFF signal, performing writing in a rotational direction of the substrate along with the rotation of the substrate, and terminating the writing by a blanking-ON signal based on write data to perform writing for one round, and repeating the writing based on the ON/OFF control by moving the electron beam or substrate in a radial direction of the substrate and rotation control is performed for controlling the rotation speed of the rotation stage so as to be increased for inner track writing and decreased for outer track writing inversely proportional to the radius of the writing position.

REFERENCES:
patent: 7868308 (2011-01-01), Komatsu et al.
patent: 2009/0140162 (2009-06-01), Komatsu et al.
patent: 2009/0140163 (2009-06-01), Komatsu et al.
patent: 2009/0184265 (2009-07-01), Komatsu et al.
patent: 2009/0189094 (2009-07-01), Komatsu et al.
patent: 2009/0194711 (2009-08-01), Usa et al.
patent: 2000-207738 (2000-07-01), None
patent: 2003-248981 (2003-09-01), None

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