Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask is reusable
Patent
1995-11-28
1998-06-02
Powell, William
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
Mask is reusable
156345, 216 63, 216 66, 21912119, 2191212, 438707, B44C 122, H01L 2100
Patent
active
057594236
ABSTRACT:
An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.
REFERENCES:
patent: 5334282 (1994-08-01), Nakayama et al.
J. Vac. Sci. Technol., 15(3), May/Jun. 1978, pp. 887-890. (Cited on p. 2, line 14-15 in our specification.)
Proc. of 1989 Intern. Symp. on Micro Process Conference, pp. 59-63. (Cited on p. 3, like 6-7 in our specification.)
Japanese Patent Laid-open No. Hei 3-270215. (Cited on p. 3, line 12 in our specification.)
Pfeiffer, Variable Spot Shaping for Electron-Beam Lithograph, J. Vac. Sci. Technol., 15(3), May/Jun. 1978, pp. 887-890.
Hattori et al., Triangular Shaped Beam Technique in EB Exposure System Ex-7 for ULSI Patten Formation, Proc. of 1989 Intern. Symp. on MicroProcess Conference, pp. 59-63.
Itoh Hiroyuki
Kawasaki Katsuhiro
Saitou Norio
Sohda Yasunari
Someda Yasuhiro
Hitachi , Ltd.
Powell William
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