Electron beam testing method and apparatus of mask

Details Electron beam testing method and apparatus of mask Electron beam testing method and apparatus of mask

1979-11-21

1981-04-28

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250311, 250399, A61K 2702

Patent

active

042648220

ABSTRACT:
A method and an apparatus for testing a mask by an electron beam are disclosed in which the electron beam probe is first incident upon a predetermined point on a mask pattern of a photomask used to fabricate a semiconductor integrated circuit, the mask pattern is scanned by the electron beam probe from the predetermined point in a direction, the scanning operation is stopped when the electron beam probe reaches an edge of the mask pattern, the position of the edge or the distance between the predetermined point and the edge is determined by the number of pulse required to deflect the electron beam probe by a desired amount, and the position or distance thus determined is compared with the design data of the mask pattern to examine the dimensions of the mask pattern.

REFERENCES:
patent: 3519788 (1970-07-01), Hatzakis
patent: 3875414 (1975-04-01), Prior
patent: 3876883 (1975-04-01), Broers
patent: 4119854 (1978-10-01), Tanaka et al.

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