Electron-beam-sensitive resist material for microstructures in e

Details Electron-beam-sensitive resist material for microstructures in e Electron-beam-sensitive resist material for microstructures in e

1987-02-24

1989-06-06

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430276, 430540, 430913, 430925, G03C 500

Patent

active

048371254

ABSTRACT:
An electron-beam-sensitive resist material is provided that includes film having high-polymers and includes dopings. The material is made into a solution that is added to the substrate so that the resist material can be produced on the semiconductive or piezoelectric substrates by drying. The doping additives of the resist material can include: halogens, halogen compounds, peroxides, kaotropic salts and xanthates. The resist material is used for the production of electron-beam-written microstructures with high structural resolution and, in comparison to the known methods, eliminates the error-affected developing process.

REFERENCES:
patent: 3554794 (1971-01-01), Geisler et al.
patent: 3985915 (1976-10-01), Gipstein et al.
patent: 4032691 (1977-06-01), Kido et al.
patent: 4517276 (1985-05-01), Lewis
Hawley, Condensed Chemical Dictionary, 10th Ed., Van Nostrand Reinheld, New York, 1981, p. 834.
H. W. Deckman and J. H. Dunsmuir, PMMA Electron Resists with Narrow Molecular Weight Distribution, J. Vac. Sci. Technology, vol. 1, No. 4, Oct.-Dec. 1983, pp. 1166-1170.
L. Reimer, Electronmikroskopische Untersuchungs-und Praparations Methoden, Springer-Verlag, Berlin-Heidelberg-New York, 1967, Chapter 15.6, pp. 330-331.

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