Patent
1998-01-05
2000-03-07
Teska, Kevin J.
39550022, G06F 1750
Patent
active
060351136
ABSTRACT:
A method for formulating an exposure dose for an electron beam on a resist film for a pattern of geometric shapes which compensates for electron scattering effects utilizing hierarchial design data which is preserved to as great as an extent as possible in the computation of the exposure dose. The exposure dose is corrected for both the forward scatter and backscatter effects of the electron beam in which the design data is modified for interactions of shapes which are affected only over the forward scatter range. In another version of the method, a multiple Gaussian approximation is used where the short term Gaussian terms are treated as the forward scatter terms and the long term Gaussian terms are treated as the back scatter terms.
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Gerber Porter Dean
Wind Samuel Jonas
August Casey P.
International Business Machines - Corporation
Jones Hugh
Teska Kevin J.
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