Electron beam lithography with reduced charging effects

Details Electron beam lithography with reduced charging effects Electron beam lithography with reduced charging effects

1993-03-02

1994-02-22

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 156663, 156904, 430296, 430330, 430942, B44C 122, C03C 1500, C23F 100

Patent

active

052883680

ABSTRACT:
A direct-writing electron beam is used for defining features in a resist layer and hence ultimately in an underlying workpiece, such as in a phase-shifting mask substrate or a semiconductor integrated circuit wafer. The resist layer is located on a top major surface of the workpiece.
In a specific embodiment, the resist layer is located underneath a protective layer of polyvinyl alcohol ("PVA"); and a grounded conductive layer, such as a conductive organic layer, is located on the protective layer. After exposing the top major surface of the resulting structure to the direct-writing electron beam, the following steps are performed:

REFERENCES:
patent: 5091285 (1992-02-01), Watanabe et al.
patent: 5244759 (1993-09-01), Pierrat
Yano, K. et al., "A New Process for Reducing the Charging Effect in Electron Beam Lithography," JJAP Series 4, Proc. of 1990 Intern. MicroProcess Conference, pp. 147-150 (1990).

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