Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-10-17
1992-07-14
Howell, Janice A.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
21912125, H01J 37304
Patent
active
051305500
ABSTRACT:
An electron beam lithography apparatus comprising an upper aperture, a lower aperture, a deflector disposed between the upper aperture and the lower aperture, an optical lens for converging the electron beam passed through the lower aperture onto a specimen, and means for measuring an electron reflected from a position mark installed on a stage when the electron beam scans the position mark, calculating a correction value of the section and the measured reflectional electron and controlling the deflector according to the correction value. As the shapes of the electron beam are corrected by detecting the reflectional electron from the position mark and measuring the positional error of the sectional shape of the electron beam corresponding to the set sectional shapes, the sectional shapes are corrected in high accuracy.
REFERENCES:
patent: 4145597 (1979-03-01), Yasuda
patent: 4243866 (1981-01-01), Pfeiffer et al.
patent: 4258265 (1981-03-01), Sumi
patent: 4825033 (1989-04-01), Beasley
patent: 4914304 (1990-04-01), Koyama
patent: 4980567 (1990-12-01), Yasuda et al.
Kakiuchi Hideyuki
Nakamura Kazumitsu
Hitachi , Ltd.
Howell Janice A.
Nguyen Kiet T.
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