Industrial electric heating furnaces – Electron beam furnace device
Reexamination Certificate
2003-04-23
2004-10-12
Hoang, Tu Ba (Department: 3742)
Industrial electric heating furnaces
Electron beam furnace device
C373S014000, C219S121120, C250S492200
Reexamination Certificate
active
06804288
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an electron beam exposure apparatus and an electron beam deflection apparatus.
2. Description of the Related Art
FIG. 1
is a diagram showing a configuration of an electron beam deflection apparatus
400
according to a conventional electron beam exposure apparatus. The electron beam deflection apparatus
400
includes a substrate
500
, apertures
600
,
610
, and
620
provided in the substrate
500
, and deflectors
510
,
520
, and
530
provided at the apertures
600
,
610
and
620
respectively. In the electron beam deflection apparatus
400
, the electron beams which pass through the apertures
600
,
610
, and
620
are independently deflected by applying voltage to deflecting electrodes of the deflectors
510
,
520
, and
530
.
However, in the electron beam deflection apparatus
400
including the plurality of deflectors
510
,
520
, and
530
, there is a problem that an electric field generated by a predetermined deflector affects electron beam other than the electron beam which passes through a predetermined deflector. For example, negative voltage is applied to the deflecting electrode of the deflector
510
so that the electron beam which passes through the aperture
600
is to be deflected, while positive voltage is applied to the deflecting electrode of the deflector
530
so that the electron beam which passes through the aperture
620
is to be deflected. Moreover, voltage is not applied to the deflecting electrode of the deflector
520
in order to let the electron beam, which passes through the aperture
610
, go straight. However, as shown in
FIG. 1
, an electric field is generated on the orbit of the electron beam which passes through the deflector
520
due to an electric potential difference between the deflector
510
and the deflector
530
, and the electron beam which passes through the deflector
520
is deflected in a direction of the deflector
530
to which the positive electric potential is applied.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the present invention to provide an electron beam exposure apparatus and an electron beam deflection apparatus which can solve the foregoing problem. The object can be achieved by combinations described in the independent claims. The dependent claims define further advantageous and exemplary combinations of the present invention.
In order to solve the foregoing problem, according to the first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a pattern on a wafer by a plurality of electron beams. The electron beam exposure apparatus includes: an electron beam generating section for generating the plurality of electron beams; a deflecting section including a plurality of deflectors for deflecting the plurality of electron beams respectively; and a screening section including a first screen electrode provided between the plurality of deflectors along an irradiation direction of the electron beam, wherein a distance between an upper end of the first screen electrode and the electron beam generating section is shorter than a distance between a distal end of the deflectors and the electron beam generating section, and a distance between a lower end of the first screen electrode and the wafer is shorter than a distance between the distal end of the deflectors and the wafer.
The first screen electrode may have a gridiron shape, where each of the plurality of deflectors are provided between bars of the grid. The first screen electrode may be provided at circumference of each of the plurality of deflectors.
The deflecting section may be provided in a direction substantially perpendicular to the irradiation direction of the electron beams, and may further include a deflector substrate at which the plurality of deflectors are provided, and the first screen electrode may be attached on the deflector substrate.
The first screen electrode may be provided so that a distance between an upper end of the first screen electrode and the electron beam generating section is shorter than a distance between a distal end of the deflector and the electron beam generating section, and a distance between a lower end of the first screen electrode and the wafer
44
is shorter than a distance between the distal end of the deflectors and the wafer.
The deflecting section may be provided in a direction substantially perpendicular to the irradiation direction of the electron beam, and may further include a deflector substrate at which the plurality of deflectors are provided, and the screening section may be provided substantially parallel with the deflector substrate, and may further include a first screening substrate on which the first screen electrode is attached.
The screening section may include: a second screen electrode provided across the deflector substrate from the first screen electrode along the irradiation direction of the electron beams; and a second screening substrate provided across the deflector substrate from the first screening substrate in a direction substantially parallel with the deflector substrate. The second screen electrode may be attached on the second screening substrate.
The first screen electrode may include a plurality of apertures in a direction substantially perpendicular to the irradiation direction of the electron beams. The first screen electrode may be a grid electrode.
The electron beam exposure apparatus may further include an electron lens section for focusing the plurality of electron beams independently. The electron lens section may include: a first magnetic conductor with a plurality of first apertures through which the plurality of electron beams pass; and a second magnetic conductor with a plurality of second apertures through which each of the plurality of electron beams, which has passed through each of the first apertures, passes, where the second magnetic conductor is provided substantially parallel with the first magnetic conductor. The deflector may be provided inside the first aperture, and the first screen electrode may be provided between the first magnetic conductor and the second magnetic conductor.
The electron beam exposure apparatus may further include an electron lens section for focusing the plurality of electron beams independently. The electron lens section may include: a first magnetic conductor with a plurality of first apertures through which the plurality of electron beams pass; and a second magnetic conductor with a plurality of second apertures through which each of the plurality of electron beams, which has passed through each of the first apertures, passes, where the second magnetic conductor is provided substantially parallel with the first magnetic conductor. The deflector may be provided inside the first aperture. The first screen electrode may provided between the plurality of second apertures of the second magnetic conductor extending from the second magnetic conductor to a direction of the wafer. The screening section may further include: a second screen electrode provided between the plurality of first apertures of the first magnetic conductor extending from the first magnetic conductor to a direction of the electron beam generating section; and a third screen electrode provided between the plurality of first apertures and between the first magnetic conductor and the second magnetic conductor, extending along the irradiation direction of the electron beams.
The screening section may include: a first screening substrate, which is provided substantially parallel with the second magnetic conductor, on which the first screen electrode is attached; and a second screening substrate, which is provided substantially parallel with the first magnetic conductor, on which the second screen electrode is attached.
According to the second aspect of the present invention, there is provided an electron beam deflection apparatus for independently deflecting a plurality of electron beams. The electron beam deflection apparatus
Advantest Corporation
Hoang Tu Ba
Morrison & Foerster / LLP
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