Electron beam etching device and method

Etching a substrate: processes – Etching and coating occur in the same processing chamber

Reexamination Certificate

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C216S059000, C216S063000, C216S067000, C216S079000, C438S694000, C438S695000, C438S706000, C438S758000, C427S596000, C427S096100

Reexamination Certificate

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07833427

ABSTRACT:
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

REFERENCES:
patent: 4260649 (1981-04-01), Dension et al.
patent: 4543486 (1985-09-01), Rose
patent: 4579750 (1986-04-01), Bowen et al.
patent: 4581248 (1986-04-01), Roche
patent: 4624736 (1986-11-01), Gee et al.
patent: 4655849 (1987-04-01), Schachameyer et al.
patent: 4668304 (1987-05-01), Schachameyer et al.
patent: 4670063 (1987-06-01), Schachameyer et al.
patent: 4670064 (1987-06-01), Schachameyer et al.
patent: 4685976 (1987-08-01), Schachameyer et al.
patent: 4694777 (1987-09-01), Roche
patent: 4832781 (1989-05-01), Mears
patent: 4933206 (1990-06-01), Cox
patent: 4938996 (1990-07-01), Ziv et al.
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 4980198 (1990-12-01), Dowben et al.
patent: 5032435 (1991-07-01), Biefeld et al.
patent: 5047649 (1991-09-01), Hodgson et al.
patent: 5102830 (1992-04-01), Sandhu
patent: 5140164 (1992-08-01), Talbot et al.
patent: 5155053 (1992-10-01), Atkinson
patent: 5164222 (1992-11-01), Gottsleben et al.
patent: 5326981 (1994-07-01), Hara et al.
patent: 5387443 (1995-02-01), Ota et al.
patent: 5403433 (1995-04-01), Morrison et al.
patent: 5429730 (1995-07-01), Nakamura et al.
patent: 5438019 (1995-08-01), Sandhu
patent: 5472935 (1995-12-01), Yandrofski et al.
patent: 5508368 (1996-04-01), Knapp et al.
patent: 5622567 (1997-04-01), Kojima et al.
patent: 5639342 (1997-06-01), Chen et al.
patent: 5641545 (1997-06-01), Sandhu
patent: 5648114 (1997-07-01), Paz De Araujo et al.
patent: 5682041 (1997-10-01), Kawakubo et al.
patent: 5733609 (1998-03-01), Wang
patent: 5754297 (1998-05-01), Nulman
patent: 5759923 (1998-06-01), McMillan et al.
patent: 5800617 (1998-09-01), Sandhu
patent: 5807650 (1998-09-01), Komano et al.
patent: 5825035 (1998-10-01), Mizumura et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 5942854 (1999-08-01), Ryoji et al.
patent: 5976328 (1999-11-01), Azuma et al.
patent: 5985693 (1999-11-01), Leedy
patent: 5989928 (1999-11-01), Nakata et al.
patent: 6051287 (2000-04-01), Marsh
patent: 6064800 (2000-05-01), Sandhu
patent: 6091071 (2000-07-01), Franz et al.
patent: 6113751 (2000-09-01), Morgenthaler
patent: 6143085 (2000-11-01), Marsh
patent: 6177147 (2001-01-01), Samukawa et al.
patent: 6187492 (2001-02-01), Ri et al.
patent: 6194325 (2001-02-01), Yang et al.
patent: 6214183 (2001-04-01), Maishev et al.
patent: 6281072 (2001-08-01), Li et al.
patent: 6291341 (2001-09-01), Sharan et al.
patent: 6309972 (2001-10-01), Pio
patent: 6310341 (2001-10-01), Todokoro et al.
patent: 6462333 (2002-10-01), Gersonde
patent: 6499425 (2002-12-01), Sandhu et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6613702 (2003-09-01), Sandhu et al.
patent: 6661005 (2003-12-01), Bruenger
patent: 6683005 (2004-01-01), Sandhu et al.
patent: 6720272 (2004-04-01), Sandhu et al.
patent: 6730367 (2004-05-01), Sandhu
patent: 6753538 (2004-06-01), Musil et al.
patent: 6764856 (2004-07-01), Holmes et al.
patent: 6787783 (2004-09-01), Marchman et al.
patent: 6793736 (2004-09-01), Sandhu et al.
patent: 6797337 (2004-09-01), Dando et al.
patent: 6809317 (2004-10-01), Vandervorst
patent: 6811615 (2004-11-01), Sun
patent: 6838114 (2005-01-01), Carpenter et al.
patent: 6838121 (2005-01-01), Weimer
patent: 6845734 (2005-01-01), Carpenter et al.
patent: 6869479 (2005-03-01), Shafeev et al.
patent: 6897907 (2005-05-01), Morimitsu
patent: 6911832 (2005-06-01), Kolachina et al.
patent: 7113276 (2006-09-01), Higgs et al.
patent: 7122125 (2006-10-01), Deshmukh et al.
patent: 7238294 (2007-07-01), Koops et al.
patent: 7256405 (2007-08-01), Nakasuji et al.
patent: 7303690 (2007-12-01), Amemiya et al.
patent: 7311947 (2007-12-01), Dando et al.
patent: 7452477 (2008-11-01), Koops et al.
patent: 7569484 (2009-08-01), Rueger et al.
patent: 2002/0173124 (2002-11-01), Joo
patent: 2002/0182542 (2002-12-01), Choi et al.
patent: 2003/0047691 (2003-03-01), Musil et al.
patent: 2003/0170389 (2003-09-01), Sandhu
patent: 2003/0201391 (2003-10-01), Shinada et al.
patent: 2004/0036398 (2004-02-01), Jin
patent: 2004/0048398 (2004-03-01), Liang et al.
patent: 2004/0091638 (2004-05-01), Haight et al.
patent: 2004/0097076 (2004-05-01), Iyer et al.
patent: 2004/0113097 (2004-06-01), Marchman et al.
patent: 2004/0124348 (2004-07-01), Utz et al.
patent: 2004/0151991 (2004-08-01), Stewart et al.
patent: 2005/0078462 (2005-04-01), Dando et al.
patent: 2005/0087514 (2005-04-01), Koops et al.
patent: 2005/0212092 (2005-09-01), Nishizawa
patent: 2005/0266168 (2005-12-01), Poullos
patent: 2006/0134920 (2006-06-01), Liang
patent: 2006/0147814 (2006-07-01), Liang
patent: 2006/0154477 (2006-07-01), Geng et al.
patent: 2006/0183055 (2006-08-01), O'Neill et al.
patent: 2006/0201911 (2006-09-01), Edelberg et al.
patent: 2006/0228634 (2006-10-01), Bret et al.
patent: 2006/0288937 (2006-12-01), Dando et al.
patent: 2006/0289969 (2006-12-01), Dando et al.
patent: 2007/0158303 (2007-07-01), Nasser-Ghodsi et al.
patent: 2007/0158304 (2007-07-01), Nasser-Ghodsi et al.
patent: 2007/0228002 (2007-10-01), Geng et al.
patent: 2007/0228296 (2007-10-01), Mouttet
patent: 2007/0278180 (2007-12-01), Williamson et al.
patent: 2008/0006603 (2008-01-01), Williamson et al.
patent: 2008/0006786 (2008-01-01), Williamson et al.
patent: 2008/0009140 (2008-01-01), Williamson et al.
patent: 2008/0038863 (2008-02-01), Rueger et al.
patent: 2008/0038894 (2008-02-01), Rueger et al.
patent: 2008/0038933 (2008-02-01), Rueger et al.
patent: 0756318 (1997-01-01), None
patent: 1363164 (2003-11-01), None
patent: 09064030 (1997-03-01), None
patent: 2004-257845 (2004-09-01), None
patent: WO-2008008156 (2008-01-01), None
patent: WO-2008008156 (2008-01-01), None
patent: WO-2008008157 (2008-01-01), None
patent: WO-2008008157 (2008-01-01), None
patent: WO-2008008159 (2008-01-01), None
patent: WO-2008008159 (2008-01-01), None
patent: WO-2008021363 (2008-02-01), None
patent: WO-2008021363 (2008-02-01), None
Fujii, Toshiaki , et al., “A nanofactory by focused ion beam”,Journal of Micromechanics and Microengineering, 15(10), (2005),S286-S291, Sep. 6, 2005.
Wang, J , et al., “Etching characteristics of chromium thin films by an electron beam induced surface reaction”,Semicond. Sci. Technol., 18, (2003),199-205, Feb. 10, 2003.
Abramo, M., et al., “Gas Assisted Etching: An Advanced Technique for Focused Ion Beam Device Modification”,Proceedings of the International Symposium for Testing Failure Analysis, (Nov. 13, 1994), 439-446 pgs.
Abramo, M. T, et al., “The application of advanced techniques for complex focused-ion-beam device modification”,Reliability of electron devices, failure physics and analysis, 1996. Proceedings of the 7th europeon symposium on Oct. 8-11, 1996, Piscataway, NJ, USA, IEEE, (Oct. 8, 1996), 1775-1778 pgs.
Alers, G., et al., “Interlevel Dielectric Failure in Cooper/Low-K Structures”,IEEE, Transactions on Devices and Material Reliability 36, (2004), 148-152, Jun. 2004.
Fujioka, H., et al., “Measurements of the Energy Dependence of Electron Beam Assisted Etching of, and Deposition on, Silica”,Journal of Physics D. Applied Physics, IOP Publishing, Bristol, GB, vol. 23, No. 2, (Feb. 14, 1990), 266-268 pgs.
Golub, M., “Scanning electron microscope investigations of highly conducting organic compoisites”,Journal of Material Sciences 36, (2001), 5543-5550.
Jonge, N., et al., “High brightness electron beam from a multi-walled carbon nanotube”,Naturevol. 420, (Nov. 28, 2002), 393-395.
Liao, J. Y, et al., “Etch characterization of packaged IC samples in an RIE with endpoint dete

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