Electron beam enhanced surface modification for making highly re

Details Electron beam enhanced surface modification for making highly re Electron beam enhanced surface modification for making highly re

1984-10-10

1986-01-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 1566591, 204192EC, 204192N, 219121EM, 2504923, 427 85, 427256, 427294, 427399, C23F 102, B44C 122, C03C 1500, H01L 21306

Patent

active

045669376

ABSTRACT:
A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

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