Electron beam drawing apparatus

Details Electron beam drawing apparatus Electron beam drawing apparatus

1999-09-15

2000-10-03

Dang, Thi

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

2504922, 25049222, A61N 500

Patent

active

061276839

ABSTRACT:
An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be achieved with a high throughput and with a high accuracy without any manual adjustment.

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patent: 5422491 (1995-06-01), Sakamoto
patent: 5952658 (1999-11-01), Shimase et al.
patent: 5986263 (1999-11-01), Hiroi et al.

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