Electron beam apparatus and electron beam inspection method

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

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Reexamination Certificate

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07875849

ABSTRACT:
The present invention provides a charged-particle beam inspection technology that enables to acquire a shadow contrast enhanced image, and to detect a shallow roughness with sufficient sensitively, which is caused by a micro-scale or nano-scale foreign matter in an inspection of a semiconductor device having a circuit pattern or the like.Immersion objective lens is employed as an objective lens for the high-resolution observation. A converged electron beam is obtained due to the objective lens. An assist electrode, a right detector and a left detector are provided in the objective lens. A velocity component of a secondary electron caused by the irradiation of the sample with an electron beam is discriminated. An azimuth component is further discriminated.

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patent: 2006/0186351 (2006-08-01), Nishiyama et al.
patent: 08-273569 (1996-10-01), None
patent: 2006-228999 (2006-08-01), None
patent: WO 00/19482 (2000-04-01), None

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