Electron beam apparatus and device manufacturing method...

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S306000, C250S307000, C250S311000, C250S3960ML, C250S397000, C250S398000, C250S427000, C250S492100, C250S492200, C250S492300

Reexamination Certificate

active

11262844

ABSTRACT:
An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.

REFERENCES:
patent: 4515858 (1985-05-01), Bayan
patent: 4516253 (1985-05-01), Novak
patent: 5276331 (1994-01-01), Oae et al.
patent: 5283440 (1994-02-01), Sohda et al.
patent: 6087667 (2000-07-01), Nakasuji et al.
patent: 6515296 (2003-02-01), Komatsu et al.
patent: 6522519 (2003-02-01), Hirayanagi
patent: 6559663 (2003-05-01), Shinada et al.
patent: 6583426 (2003-06-01), Kawanami et al.
patent: 6586952 (2003-07-01), Nozoe et al.
patent: 6593152 (2003-07-01), Nakasuji et al.
patent: 6593686 (2003-07-01), Yui
patent: 6855929 (2005-02-01), Kimba et al.
patent: 6998611 (2006-02-01), Nakasuji et al.
patent: 7012251 (2006-03-01), Nakasuji et al.
patent: 2002/0028399 (2002-03-01), Nakasuji et al.
patent: 2002/0036264 (2002-03-01), Nakasuji et al.
patent: 2002/0088940 (2002-07-01), Watanabe et al.
patent: 2002/0109090 (2002-08-01), Nakasuji et al.
patent: 2002/0130262 (2002-09-01), Nakasuji et al.
patent: 2002/0142496 (2002-10-01), Nakasuji et al.
patent: 2002/0148961 (2002-10-01), Nakasuji et al.
patent: 2003/0007677 (2003-01-01), Hiroi et al.
patent: 2003/0042417 (2003-03-01), Nakasuji et al.
patent: 2004/0119023 (2004-06-01), Nakasuji et al.
patent: 2004/0183013 (2004-09-01), Nakasuji et al.
patent: 2005/0051724 (2005-03-01), Nakasuji et al.
patent: 2005/0121611 (2005-06-01), Kimba et al.
patent: 2006/0054819 (2006-03-01), Nakasuji et al.
patent: 2006/0102838 (2006-05-01), Nakasuji et al.
patent: 62-119849 (1987-06-01), None
patent: 01-84629 (1989-03-01), None
patent: 9-171791 (1997-06-01), None
patent: 11-162384 (1999-06-01), None
patent: 11-233060 (1999-08-01), None
patent: 2000-021341 (2000-01-01), None
patent: 2000-040481 (2000-02-01), None
patent: 2000-040485 (2000-02-01), None
patent: 2001-144168 (2001-05-01), None
Thompson et al., “Fluctuations in Space-charged-limited Current at Moderately high Frequencies”, RCE Review, vol. 4, 1940, pp. 441-472.
Pfeiffer et al., “Advanced deflection concept for large area, high resolution e-beam lithography”, J. Vac. Sci. Technol., vol. 19, No. 4, Nov./Dec. 1981, pp. 1058-1063.
Smith et al., “The Detection and Measurement of Infra-red Radiation”, Oxford at the Clarendon Press, 1968, pp. 188-197.
“Communication Engineering Handbook”, Maruzen, Jul. 10, 1957, pp. 470-472.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electron beam apparatus and device manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron beam apparatus and device manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron beam apparatus and device manufacturing method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3734895

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.