Electron beam apparatus and an aberration correction optical...

Radiant energy – With charged particle beam deflection or focussing – Magnetic lens

Reexamination Certificate

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C250S305000, C250S307000, C250S310000, C250S311000, C250S3960ML

Reexamination Certificate

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07863580

ABSTRACT:
An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun61has a cathode1and a drawing electrode3, and an electron emission surface1aof the cathode defines a concave surface. The drawing electrode3has a convex surface3acomposed of a partial outer surface of a second sphere facing the electron emission surface1aof the cathode and an aperture73formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.

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