Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-07-28
2000-08-01
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 438648, 438685, 438672, 438675, H01L 214763
Patent
active
060966378
ABSTRACT:
A method is described for forming an electromigration-resistant (ER) intermetallic region beneath and adjacent a conductive plug in a via. Preferably the ER region is formed of a sintered intermetallic compound of Al and Ti, and the conductive plug is formed of W.
REFERENCES:
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5306952 (1994-04-01), Matsuura et al.
patent: 5341026 (1994-08-01), Harada et al.
Bolkhovsky Vladimir
Maziarz John J.
Sriram Tirunelveli S.
Westerheim Ann C.
Bowers Charles
Compaq Computer Corporation
Nguyen Thanh
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