Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-06
1999-07-06
Booth, Richard A.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438653, 438643, 438644, 438650, 438655, 438656, H01L 21283
Patent
active
059207949
ABSTRACT:
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 .mu.m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
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Booth Richard A.
Nguyen Ha Tran
Telefonaktiebolaget LM Ericsson
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