Electromigration resistance metal interconnect

Details Electromigration resistance metal interconnect Electromigration resistance metal interconnect

1992-08-28

1994-12-13

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257750, 257754, 257758, 257756, 257765, 257767, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

053731921

ABSTRACT:
A semiconductor device is provided which includes a conductive layer, an insulating film formed on the surface of the conductive layer, and a conductive metal interconnection layer formed on the insulating film and electrically connected to the conductive layer through a contact hole formed in a predetermined position of the insulating film. The conductive metal interconnection and the surface of the conductive layer are directly joined together and a silicon layer including a single crystal or polycrystalline silicon having a grain size of at least about 10 .mu.m is interposed between the conductive metal interconnection layer and the insulating film. The conductive metal interconnection layer becomes a single crystal or a polycrystal having a grain size of about 10 .mu.m or above under the influence of the crystalline properties of the underlying crystal of the silicon layer. Therefore, in the conductive metal interconnection layer in the entire region including the inside portion of the contact hole, essentially no grain boundaries exist. Thus, electromigration of conductive metal ions is controlled.

REFERENCES:
patent: 4744858 (1988-05-01), McDavid et al.
patent: 4800177 (1989-01-01), Nakamae
patent: 4922320 (1990-05-01), McDavid et al.
patent: 4945070 (1990-07-01), Hsu
T. Kobayashi et al, "Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 27, No. 9, Sep. 1988, pp. L1775-L1777.

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