Electromigration-reliability improvement of dual damascene...

Details Electromigration-reliability improvement of dual damascene... Electromigration-reliability improvement of dual damascene...

2006-08-08

2006-08-08

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S666000

Reexamination Certificate

active

07087516

ABSTRACT:
Metallic reservoirs in the form of passive or dummy vias are used on interconnects as a source or sink for electromigration material, slowing the build up of electromigration-induced mechanical stress. The passive or dummy vias are disposed in a vertical direction from the interconnect (perpendicular to the plane of the interconnect) to so that the reservoirs do not occupy additional space in the interconnect layer. Both apparatus and method embodiments are described.

REFERENCES:
patent: 5629236 (1997-05-01), Wada et al.
patent: 6124198 (2000-09-01), Moslehi
patent: 6242808 (2001-06-01), Shimizu et al.
patent: 6281586 (2001-08-01), Feurle et al.
patent: 6307268 (2001-10-01), Lin
Hau-Riege, S.P., et al., Experimental Studies of the Reliability of Interconnect Trees, MRS Symposium Proceedings, 612,D10.2.1 (2000), 6 pages.

Affiliated with

Also associated with

Rating

Electromigration-reliability improvement of dual damascene... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electromigration-reliability improvement of dual damascene..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electromigration-reliability improvement of dual damascene... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3617911