Electromigration process for the purification of molten silicon

Details Electromigration process for the purification of molten silicon Electromigration process for the purification of molten silicon

1981-02-10

1982-05-18

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156602, 422246, C30B 1534

Patent

active

043303595

ABSTRACT:
A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface.
In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

REFERENCES:
patent: 2842467 (1958-07-01), Landaver et al.
patent: 3058915 (1962-10-01), Bennett
patent: 3346344 (1967-10-01), Levinstein et al.
patent: 3453088 (1969-07-01), Lebek
patent: 3935058 (1976-01-01), Kuhlmann-Schafer
patent: 4116641 (1978-09-01), Ciszek

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