Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-17
2006-10-17
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S613000, C438S615000, C438S108000
Reexamination Certificate
active
07122460
ABSTRACT:
A microelectronic package is disclosed including a microelectronic device, a substrate, and a signaling path coupling the microelectronic device with the substrate. The signaling path includes a conductive material, a solder joint, and a barrier material disposed between the conductive material and the solder joint. The barrier material may include nickel, cobalt, iron, titanium, and combinations thereof.
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Riet Labie, et al. “Investigation of Co UBM for Direct Bumping on CU/LowK Dies”, 2003 Electronics Components and Technology Conference. pp. 1230-1234.
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