Static information storage and retrieval – Systems using particular element
Reexamination Certificate
2005-06-24
2008-03-25
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
C365S164000
Reexamination Certificate
active
07349236
ABSTRACT:
A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.
REFERENCES:
patent: 4979149 (1990-12-01), Popovic et al.
patent: 5036490 (1991-07-01), Kajimura et al.
patent: 5053995 (1991-10-01), Kajimura et al.
patent: 5262000 (1993-11-01), Welbourn et al.
patent: 5638946 (1997-06-01), Zavracky
patent: 5793040 (1998-08-01), Oguchi et al.
patent: 5796152 (1998-08-01), Carr et al.
patent: 5886922 (1999-03-01), Saito et al.
patent: 5966066 (1999-10-01), Mehregany et al.
patent: 6054745 (2000-04-01), Nakos et al.
patent: 6100109 (2000-08-01), Melzner et al.
patent: 6473361 (2002-10-01), Chen et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 7092272 (2006-08-01), Gilkey et al.
patent: 2007/0182427 (2007-08-01), Chen et al.
Chen Jingkuang
Lin Pinyen
Ma Jun
Dinh Son
Fay Sharpe LLP
Nguyen Hien N
Xerox Corporation
LandOfFree
Electromechanical memory cell with torsional movement does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electromechanical memory cell with torsional movement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electromechanical memory cell with torsional movement will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3964503