Electromechanical electron transfer devices

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device

Reexamination Certificate

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Details

C438S142000, C257S213000, C257S214000, C257S414000, C257S416000, C257SE21051

Reexamination Certificate

active

11227336

ABSTRACT:
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.

REFERENCES:
patent: 6355532 (2002-03-01), Seliskar et al.
patent: 6573526 (2003-06-01), Yamashita et al.
patent: 6653653 (2003-11-01), Brousseau, III
patent: 6700693 (2004-03-01), Roberts et al.
patent: 6946693 (2005-09-01), Scheible et al.
patent: 19961811 (2001-07-01), None
A. Erbe, et al., “Nanomechanical Resonator Shuttling Single Electrons at Radio Frequencies,” Physical Review Letters, vol. 87, No. 9, Aug. 27, 2001, pp. 96106-1-96106-4.

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