Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1990-07-26
1993-07-20
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 78, 313509, H01L 3300
Patent
active
052296288
ABSTRACT:
An electroluminescence device is constituted by sequentially stacking a glass substrate, a transparent electrode, a luminescent layer, an interlayer containing a semiconductor having a band gap of 2.4 eV or more, a current-limiting layer containing a conductive powder, and a backplate.
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Lee et al., "Possible Degradation Mechanism in ZnS:Mn Alternating Current Thin Film Electroluminescent Display", Appl. Phys. Lett., vol. 58, No. 9, Mar. 4, 1991.
SID 84 Digest entitled "High-Contract Thin-Film/Powder Composite DCEL Devices" by Malcolm H. Higton, 1984.
Aoki Yuichi
Enjoji Katsuhisa
Kobayashi Shiro
Nakanishi Kouji
Ogino Etsuo
Hille Rolf
Nippon Sheet Glass Co. Ltd.
Tran Minhloan
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