Electroluminescence display device with light shielding film

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S049000, C257S052000, C257S057000, C257SE29151

Reexamination Certificate

active

07122832

ABSTRACT:
An EL element and an interface between a channel and an impurity diffusion area of a thin film transistor provided in the vicinity of the EL element are spaced apart. A light shielding film is provided between the EL element and the interface. By providing such a space and/or the light shielding film, generation of a leak current, which would otherwise be caused by light emitted from the self-emissive EL element entering the TFT, is reliably prevented, thereby ensuring that emitted light is not brighter than a predetermined luminance.

REFERENCES:
patent: 4759610 (1988-07-01), Yanagisawa
patent: 5670792 (1997-09-01), Utsugi et al.
patent: 5684365 (1997-11-01), Tang et al.
patent: 6072450 (2000-06-01), Yamada et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6133693 (2000-10-01), Keyser
patent: 6194837 (2001-02-01), Ozawa
patent: 6246179 (2001-06-01), Yamada
patent: 6366025 (2002-04-01), Yamada
patent: 6512504 (2003-01-01), Yamauchi et al.
patent: 10-214043 (1998-08-01), None

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