Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07115953
ABSTRACT:
A semiconductor device includes a semiconductor substrate containing Si as a main component, and an active element formed on the semiconductor substrate and including an insulating metal silicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
REFERENCES:
patent: 2002-100766 (2002-04-01), None
Norton et al, “Strontium silicide termination and silicate epitaxy on (oo1) Si”, J. Vac. Sci. Technol. B 20(1), Jan./Feb. 2002.
Hiroyuki Mori, et al.; “Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method”; Japanese Journal of Applied Physics; vol. 30, No. 8A; pp. L1415-L1417; (Aug. 1991).
Bum Ki Moon, et al.; “Roles of Buffer Layers in Epitaxial Growth of SrTIO3Films on Silicon Substrates”; Japanese Journal of Applied Physics; vol. 33 (1994); Part 1, No. 3A; pp. 1472-1477; (Mar. 1994).
Z. Yu, et al.; “Epitaxial oxide thin films on Si(001)”; J. Vac. Sci. Technol. B 18(4); pp. 2139-2145; (Jul./Aug. 2000).
R. A. McKee, et al.; “Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide”; SCIENCE; vol. 293, pp. 468-471; (Jul. 20, 2001).
Sanghun Jeon, et al.; “Epitaxial SrTiO3on Silicon with EOT of 5.4Å for MOS Gate Dielectric Applications”; IEDM Technical Digest; pp. 955-957; (2002).
R. A. McKee, et al.; “Crystalline Oxides on Silicon: The First Five Monolayers”; Physical Review Letters; vol. 81, No. 14; pp. 3014-3017; (Oct. 5, 1998).
Akihiko Hirata, et al.; “Strontium and SrO epitaxy on hydrogen-terminated Si(111)”; Appl. Phys. Lett. 65 (25); pp. 3182-3184; (Dec. 19, 1994).
D. P. Norton, et al.; “Strontium silicide termination and silicate epitaxy on (001) Si”; J. Vac. Sci. Technol. B 20(1); 2002; (Jan./Feb. 2002).
Evers et al., “Electrical Properties of Alkaline Earth Disilicides and Digermanides,” Mater. Res. Bull. (USA), vol. 9, No. 5, pp. 549-553, May 1974.
Hiroyuki Mori, et al.; “Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method”; Japanese Journal of Applied Physics; vol. 30, No. 8A; pp. L1415-L1417; (Aug. 1991).
Bum Ki Moon, et al.; “Roles of Buffer Layers in Epitaxial Growth of SrTiO3Films on Silicon Substrates”; Japanese Journal of Applied Physics; vol. 33 (1994); Part 1, No. 3A; pp. 1472-1477; (Mar. 1994).
Z. Yu, et al.; “Epitaxial oxide thin films on Si(001)”; J. Vac. Sci. Technol. B 18(4); pp. 2139-2145; (Jul./Aug. 2000).
R.A. McKee, et al.; “Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide”; SCIENCE; vol. 293, pp. 468-471; (Jul. 20, 2001).
Sanghun Jeon, et al.; “Epitaxial SrTiO3on Silicon with EOT of 5.4A for MOS Gate Dielectric Applications”; IEDM Technical Digest; pp. 955-957; (2002).
R.A. McKee, et al.; “Crystalline Oxides on Silicon: The First Five Monolayers”; Physical Review Letters; vol. 81, No. 14; pp. 3014-3017; (Oct. 5, 1998).
Akihiko Hirata, et al.; “Strontium and SrO epitaxy on hydrogen-terminated Si(111)”; Appl. Phys. Lett. 65 (25); pp. 3182-3184; (Dec. 19, 1994).
D.P. Norton, et al.; “Strontium silicide termination and silicate epitaxy on (001) SI”; J. Vac. Sci. Technol. B 20(1); 2002; (Jan./Feb. 2002).
Nishikawa Yukie
Shimizu Tatsuo
Yamaguchi Takeshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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