Electroluminescence device with nanotip diodes

Details Electroluminescence device with nanotip diodes Electroluminescence device with nanotip diodes

2008-01-22

2008-01-22

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Electron emitter manufacture

C438S713000, C977S834000

Reexamination Certificate

active

07320897

ABSTRACT:
A nanotip electroluminescence (EL) diode and a method are provided for fabricating said device. The method comprises: forming a plurality of Si nanotip diodes; forming a phosphor layer overlying the nanotip diode; and, forming a top electrode overlying the phosphor layer. The nanotip diodes are formed by: forming a Si substrate with a top surface; forming a Si p-well; forming an n+ layer of Si, having a thickness in the range of 30 to 300 nanometers (nm) overlying the Si p-well; forming a reactive ion etching (RIE)-induced polymer grass overlying the substrate top surface; using the RIE-induced polymer grass as a mask, etching areas of the substrate not covered by the mask; and, forming the nanotip diodes in areas of the substrate covered by the mask.

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H, Manohara, “A new method for fabricating random silicon nanotips” NanotechBriefs, Mar. 2004.

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