Electroless plating process, and embedded wire and forming...

Details Electroless plating process, and embedded wire and forming... Electroless plating process, and embedded wire and forming...

2005-02-08

2005-02-08

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C174S068100

Reexamination Certificate

active

06852624

ABSTRACT:
The present invention is to provide a process for forming the embedded wires having the higher density and the finer pitch without using catalyzing agent in an economical manner. The electroless plating process of copper according to the present invention includes steps of preparing a substrate, and forming a metal nitride layer containing high melting-point metal on the substrate. The metal nitride layer has a stabilized nitride layer in the vicinity of a top surface thereof. The stabilized nitride layer has a composition ratio of nitrogen atoms over oxygen atoms, which is about 0.4 or more. The process also includes a step of immersing the substrate into a plating solution containing copper so as to displace high melting-point metal contained in the metal nitride layer by copper, thereby forming an electroless copper plating layer on the metal nitride layer.

REFERENCES:
patent: 5712193 (1998-01-01), Hower et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 6169027 (2001-01-01), Dobson
patent: 2000-49119 (2000-02-01), None
patent: 1999-0088541 (1999-12-01), None

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