Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-29
2009-06-23
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S697000, C438S399000, C257S004000, C257SE21008, C257SE47001, C257SE21304
Reexamination Certificate
active
07550380
ABSTRACT:
A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.
REFERENCES:
patent: 5443865 (1995-08-01), Tisdale et al.
patent: 5702981 (1997-12-01), Maniar et al.
patent: 5827777 (1998-10-01), Schinella et al.
patent: 6117720 (2000-09-01), Harshfield
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6277729 (2001-08-01), Wu
patent: 6348365 (2002-02-01), Moore et al.
patent: 6369429 (2002-04-01), Parmanick et al.
patent: 6383821 (2002-05-01), Young et al.
patent: 6451698 (2002-09-01), Au et al.
patent: 6455424 (2002-09-01), McTeer et al.
patent: 6468858 (2002-10-01), Lou
patent: 6479902 (2002-11-01), Lopatin et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6531373 (2003-03-01), Gill et al.
patent: 6713378 (2004-03-01), Drynan
patent: 6731528 (2004-05-01), Hush et al.
patent: 6737312 (2004-05-01), Moore
patent: 6764894 (2004-07-01), Lowrey
patent: 6884724 (2005-04-01), Hsu et al.
patent: 7247876 (2007-07-01), Lowrey
patent: 2002/0096775 (2002-07-01), Ning
patent: 2002/0168852 (2002-11-01), Harshfield et al.
patent: 2003/0035977 (2003-02-01), Datta
patent: 2003/0119317 (2003-06-01), Nagami et al.
patent: 2003/0203512 (2003-10-01), Kweon
patent: 2003/0227091 (2003-12-01), Sinha et al.
patent: 2003/0228749 (2003-12-01), Sinha et al.
patent: 2005/0006681 (2005-01-01), Okuno
patent: 2005/0082678 (2005-04-01), Barth
patent: 2005/0122771 (2005-06-01), Chen
patent: 2005/0124155 (2005-06-01), Brooks et al.
patent: 0257948 (1988-03-01), None
patent: WO 2004055825 (2004-07-01), None
Elkins Patricia C.
Klein Rita J.
Moore John T.
Dinsmore & Shohl LLP
Everhart Caridad M
Micro)n Technology, Inc.
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